PBRN113ZT,215 datasheet

Маркировка

PBRN113ZT,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBRN113ZT,215 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 300mA, 5V Frequency - Transition: - ID_COMPONENTS: 1948023 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Peak Dc Collector Current: 700 mA Power - Max: 250mW Resistor - Base (r1) (ohms): 1K Resistor - Emitter Base (r2) (ohms): 10K Series: - Transistor Polarity: NPN Transistor Type: NPN - Pre-Biased Typical Input Resistor: 1 KOhm Typical Resistor Ratio: 0.1 Vce Saturation (max) @ Ib, Ic: 1.15V @ 8mA, 800mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 40 V Peak DC Collector Current: 700 mA Factory Pack Quantity: 3000 Part # Aliases: PBRN113ZT T/R Other Names: 934058987215, PBRN113ZT T/R
Количество страниц

17 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

149,46 KB